Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys
作者： ML Nakarmi , KH Kim , M Khizar , ZY Fan , JY Lin
DOI: 10.1063/1.1879098
关键词: Doping 、 Wide-bandgap semiconductor 、 Electroluminescence 、 Light-emitting diode 、 Materials science 、 Optoelectronics 、 Sapphire 、 Chemical vapor deposition 、 Hall effect 、 Electrical resistivity and conductivity
摘要: Mg-doped Al0.7Ga0.3N epilayers (∼1μm) were grown on an AlN/sapphire template by metalorganic chemical vapor deposition and the electrical optical properties of these studied. For optimized epilayers, we have obtained a resistivity around 105Ωcm at room temperature confirmed p-type conduction elevated temperatures(>700K) with about 40Ωcm 800 K. From dependent Hall effect measurement, activation energy Mg acceptor is found to be 400 meV for alloy. The been incorporated into deep-ultraviolet (UV) (λ<300nm) light-emitting diode (LED) structures as electron blocking layer. An enhancement in performance UV LEDs was obtained. peak emission wavelengths 280 nm fabricated circular geometry (300 μm disk diameter). Output power reached 0.35 mW 20 mA 1.1 150 dc current. importance Al0.7Ga0.3N...
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