Intentional control of n-type conduction for Si-doped AlN and AlXGa1−XN (0.42⩽x<1)

摘要: We have obtained n-type conductive Si-doped AlN and AlXGa1−XN with high Al content (0.42⩽x<1) in metalorganic vapor phase epitaxy by intentionally controlling the Si dopant density, [Si]. showed conduction when [Si] was less than 3×1019 cm−3. When more 3×1019 cm−3, it became highly resistive due to self-compensation of donors. This indicates that plays an important role at higher determines upper doping limit for AlXGa1−XN. For x⩾0.49, ionization energy donors increased sharply increasing content. These resulted a sharp decrease highest obtainable electron concentration