Nitride semiconductor heterostructures and related methods

摘要: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate at least one layer epitaxially grown thereover. The epitaxial may comprise of AlN, GaN, InN, or any binary tertiary alloy combination thereof, have average dislocation density within the semiconductor heterostructure is less than about 106 cm-2. Bulk single crystals AlN a diameter greater 25 mm densities 10,000 cm-2 less, high-quality substrates surfaces desired crystallographic orientation fabricated from these bulk crystals.