Electronic device using group iii nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it

摘要: The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing high-electron concentration of ammonothermally grown substrates having dislocation density less than 10 5 cm −2 , combined with high-purity active layer Ga 1-x-y Al x In y N (0≦x≦1, 0≦y≦1) by vapor phase method, can attain high level breakdown voltage as well low on-resistance. To realize good matching between and layer, transition is optionally introduced. thicker depletion region created structure in layer.