Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals
作者： Siddha Pimputkar , Shuji Nakamura , James S. Speck , Derrick S. Kamber
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摘要: Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. compounds as impurity getters the In addition, a boron-containing gas and/or supercritical fluid is for enhanced solubility into said fluid.
lens.org 参考文章(12)
Shuji Nakamura, Makoto Saito, Tadao Hashimoto, Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals ,(2007)
Martin Eric Weiner, Method of group iii-v semiconductor crystal growth using getter dried boric oxide encapsulant ,(1970)
Peter Micah Sandvik, Kristi Jean Narang, Huicong Hong, Stephen Daley Arthur, Mark Philip D'Evelyn, Larry Burton Rowland, Dong-Sil Park, Steven Francis LeBoeuf, Gallium nitride crystals and wafers and method of making ,(2006)
Kristi Jean Narang, Mark Philip D'evelyn, Crystalline gallium nitride and method for forming crystalline gallium nitride ,(2000)
Mark P. D'Evelyn, Polycrystalline group iii metal nitride with getter and method of making ,(2009)
Nanfeng Zheng, Jie Fan, Galen D Stucky, None, One-step one-phase synthesis of monodisperse noble-metallic nanoparticles and their colloidal crystals. Journal of the American Chemical Society. ,vol. 128, pp. 6550- 6551 ,(2006) , 10.1021/JA0604717
Edith D. Bourret-Courchesne, Controlled growth of semiconductor crystals ,(1990)
Yasuo Kanbara, Roman Doradzinski, Leszek P. Sierzputowski, Robert Dwilinski, Jerzy Garczynski, Process for obtaining of bulk monocrystalline gallium-containing nitride ,(2003)
Edward Letts, Tadao Hashimoto, Masanori Ikari, High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal ,(2009)
Siddha Pimputkar, Shuji Nakamura, James S. Speck, Derrick S. Kamber, Controlling relative growth rates of different exposed crystallographic facets of a group-iii nitride crystal during the ammonothermal growth of a group-iii nitride crystal ,(2009)