Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds
作者： F Bousbih , S.Ben Bouzid , R Chtourou , F.F Charfi , J.C Harmand
DOI: 10.1016/S0928-4931(02)00075-9
关键词: Absorption (electromagnetic radiation) 、 Band gap 、 Nitride 、 Quantum well 、 Nitrogen 、 Optoelectronics 、 Molecular beam epitaxy 、 Electronic structure 、 N compounds 、 Molecular physics 、 Materials science
摘要: Abstract Bandgap energy of GaAs 1− x N strained layers and 0.83 Sb 0.17 /GaAs, 0.74 0.25 0.01 /GaAs quantum wells grown on (001) substrates by molecular beam epitaxy (MBE) were studied absorption measurements. We have investigated the red-shift bandgap effect incorporation low percentage nitrogen in with 0.1% T =15 K, we observed a band edge about 250 meV for 1% nitrogen. This has been explained anticrossing (BAC) model which localized states interact extended conduction GaAs. also performed measurements optical transitions GaAsSb/GaAs GaAsSbN/GaAs well structures. To interpret measurement results, used envelope function approximation.
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