Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
作者： J. C. Harmand , G. Ungaro , L. Largeau , G. Le Roux
DOI: 10.1063/1.1318228
关键词: Epitaxy 、 Inorganic chemistry 、 N incorporation 、 Molecular beam epitaxy 、 Nitrogen 、 Alloy 、 Materials science 、 Gallium arsenide 、 Molecular beam epitaxial growth
摘要: The incorporation of nitrogen in the low percentage range is investigated a different III–V compound matrix. materials are grown by molecular-beam epitaxy with radio-frequency plasma source. For equivalent growth conditions, same rate N found for GaAsN and GaInAsN. However, this significantly enhanced GaAsSbN alloy. These observations support discussion on reactive species.
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