Photoluminescence and photoreflectance study of annealing effects on GaAs0.909Sb0.07N0.021 layer grown by gas-source molecular beam epitaxy
作者： Hung-Pin Hsu , Yen-Neng Huang , Ying-Sheng Huang , Yang-Ting Lin , Ta-Chun Ma
DOI: 10.1063/1.2927490
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摘要: Thermal annealing effects of a GaAs0.909Sb0.07N0.021 film grown on GaAs substrate via gas-source molecular beam epitaxy have been characterized by photoluminescence (PL) and photoreflectance (PR) techniques. PL measurements show the evolution luminescence feature with thermal treatment. The conduction to heavy-hole (HH) band light-hole (LH) transitions originated from strained induced valence splitting in layer observed PR measurements. near edge transition energies are slightly blueshifted, HH LH bands is reduced rising temperature. temperature dependences analyzed using Varshni Bose–Einstein expressions range 15to300K. parameters that describe variations evaluated discussed.
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