Incorporation of N into GaAsN under N overpressure and underpressure conditions

摘要: GaAsN was grown by molecular beam epitaxy equipped with a radio frequency nitrogen plasma source. The N incorporation behaviors were investigated using series of samples at different growth rates, As4/Ga ratios, and fluxes within temperature range from 420 to 560 °C. It found that, for the higher rates (0.4–1.3 ML/s), concentration increased linearly following decrease in rate, kept independent arsenic pressure. For lower rate (0.1–0.3 significantly influenced pressure, increase decreasing follows sublinear manner. We propose model based on competition group V elements (N As) under underpressure overpressure conditions, which can explain well.