Mechanisms of nitrogen incorporation in GaAsN alloys
作者： M. Reason , H. A. McKay , W. Ye , S. Hanson , R. S. Goldman
DOI: 10.1063/1.1789237
关键词: Materials science 、 Nitrogen 、 Rutherford backscattering spectrometry 、 Nuclear reaction analysis 、 Molecular beam epitaxy 、 Channelling 、 Impurity 、 Analytical chemistry 、 Crystallography 、 Nitride 、 Epitaxy
摘要: We have investigated nitrogen incorporation mechanisms in dilute nitride GaAsN alloys grown by plasma-assisted molecular-beam epitaxy. A comparison of nuclear reaction analysis and Rutherford backscattering spectrometry channeling nonchanneling conditions reveals significant composition-dependent N into nonsubstitutional sites, presumably as either N–N or N–As split interstitials. Furthermore, we identify the (2×1) reconstruction surface structure which leads to highest substitutional incorporation, likely due high number group V sites per unit area available for exchange.We exchange.
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