Blister formation in ion-implanted GaAs: Role of diffusivity
作者： R. R. Collino , B. B. Dick , F. Naab , Y. Q. Wang , M. D. Thouless
DOI: 10.1063/1.3224199
关键词:
摘要: We have investigated the influence of substrate temperature during implantation, Timplant, on blister formation in GaAs:N layers produced by N ion implantation followed rapid thermal annealing. Similar depths popped blisters (craters) and damage profiles were observed for both low high Timplant. This is contrast to reports Timplant-dependent higher-diffusivity systems such as GaAs:H Si:H. The apparent Timplant-insensitivity likely due lower diffusivity GaAs comparison that H Si.
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