Effects of hydrogen implantation temperature on ion-cut of silicon
作者： J. K. Lee , M. Nastasi , N. David Theodore , A. Smalley , T. L. Alford
DOI: 10.1063/1.1755851
关键词: Wafer 、 Elastic recoil detection 、 Silicon 、 Analytical chemistry 、 Doping 、 Materials science 、 Ion implantation 、 Annealing (metallurgy) 、 Hydrogen 、 Ion
摘要: We have studied the effect of ion implantation temperature on nature cleavage and layer transfer, electrical properties in hydrogen implanted p-Si. The lattice damage concentration as-implanted Si transferred films were analyzed with elastic recoil detection, respectively. Implantations performed at −140 °C [low (LT)] room (RT) resulted a variation thickness surface morphology layers. from was both thicker atomically smoother than produced by implantation. as-transferred obtained RT-implanted p-Si wafer n-type, but converted to p-type after annealing 650 °C or higher. LT-implanted highly resistive even high annealing. These variations observed be correlated profiles measured c...
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