Hydrogen-ion implantation in GaAs
作者： G Gawlik , R Ratajczak , A Turos , J Jagielski , S Bedell
DOI: 10.1016/S0042-207X(01)00260-3
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摘要: The results of the basic study on depth distribution hydrogen atoms and corresponding damage pro"les produced by 50 keV H-ion implantation in (1 0 0) GaAs are reported. in#uence dose temperature subsequent annealing were studied. was measured using N(p,)C nuclear reaction, whereas RBS/channeling applied for defect analysis. Two regions revealed: at temperatures below 903C independently no blisters found, whereas, above 1203C appear doses exceeding critical value. In latter region hydrogen-defect complex formation observed which e!ective traps stabilize radiation damage. With increasing these complexes agglomerate into gas bubbles. increase pressure such bubbles upon thermal treatment can result splitting a surface layer from substrate. 2001 Elsevier Science Ltd. All rights reserved.
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