1.55 μm GaAs/GaNAsSb/GaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy
作者： KH Tan , Soon Fatt Yoon , Wan Khai Loke , Satrio Wicaksono , Zhichuan Xu
DOI: 10.1063/1.2898507
关键词:
摘要: We demonstrate a 1.55μm GaAs∕GaNAsSb∕GaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAs∕GaAs system. The 0.4-μm-thick GaNAsSb guiding layer contains ∼3.5% of N and 9% Sb, resulting in band gap 0.88eV. refractive index was measured from 800to1700nm. has value 3.42 at wavelength. propagation loss using Fabry–Perot resonance method found be affected nitrogen-related defect absorption.
scitation.org
harvard.edu
sci-hub.se 参考文章(16)
S. Wicaksono, S.F. Yoon, W.J. Fan, W.K. Loke, The effect of rapid thermal annealing on GaAsSbN quantum-well and GaAsSbN bulk lattice-matched to GaAs international conference on indium phosphide and related materials. pp. 421- 423 ,(2005) , 10.1109/ICIPRM.2005.1517518
D. T. F. Marple, Refractive Index of GaAs Journal of Applied Physics. ,vol. 35, pp. 1241- 1242 ,(1964) , 10.1063/1.1713601
H. C. Huang, S. Yee, M. Soma, The carrier effects on the change of refractive index for n‐type GaAs at λ=1.06,1.3, and 1.55 μm Journal of Applied Physics. ,vol. 67, pp. 1497- 1503 ,(1990) , 10.1063/1.345658
Young Tae Byun, Kyung Hyun Park, Sun Ho Kim, Sang Sam Choi, Tong Kun Lim, Single-mode GaAs/AlGaAs W waveguides with a low propagation loss Applied Optics. ,vol. 35, pp. 928- 933 ,(1996) , 10.1364/AO.35.000928
M. Seto, A. Shahar, R. J. Deri, W. J. Tomlinson, A. Yi‐Yan, GaAs/AlGaAs single‐mode optical waveguides with low propagation loss and strong optical confinement Applied Physics Letters. ,vol. 56, pp. 990- 992 ,(1990) , 10.1063/1.102572
S. Wicaksono, S. F. Yoon, W. K. Loke, K. H. Tan, B. K. Ng, Effect of growth temperature on closely lattice-matched GaAsSbN intrinsic layer for GaAs-based 1.3 μm p-i-n photodetector Journal of Applied Physics. ,vol. 99, pp. 104502- ,(2006) , 10.1063/1.2195022
A.J.N. Houghton, D.A. Andrews, G.J. Davies, S. Ritchie, Low-loss optical waveguides in MBE-grown GaAs/GaAlAs heterostructures Optics Communications. ,vol. 46, pp. 164- 166 ,(1983) , 10.1016/0030-4018(83)90269-9
K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, K. L. Lew, A. Stöhr, O. Ecin, A. Poloczek, A. Malcoci, D. Jäger, High-speed picosecond pulse response GaNAsSb p-i-n photodetectors grown by rf plasma-assisted nitrogen molecular beam epitaxy Applied Physics Letters. ,vol. 90, pp. 183515- ,(2007) , 10.1063/1.2730585
K. Hiruma, H. Inoue, K. Ishida, H. Matsumura, Low loss GaAs optical waveguides grown by the metalorganic chemical vapor deposition method Applied Physics Letters. ,vol. 47, pp. 186- 187 ,(1985) , 10.1063/1.96210
J. Van Roey, J. van der Donk, P. E. Lagasse, Beam-propagation method: analysis and assessment Journal of the Optical Society of America. ,vol. 71, pp. 803- 810 ,(1981) , 10.1364/JOSA.71.000803