High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy
作者： Xiaodong Yang , JB Heroux , MJ Jurkovic , WI Wang , None
DOI: 10.1116/1.591409
关键词: Quantum well 、 Quantum well laser 、 Molecular beam epitaxy 、 Materials science 、 Laser 、 Gallium arsenide 、 Diode 、 Optoelectronics 、 Wide-bandgap semiconductor 、 Slope efficiency
摘要: 1.3 μm InGaAsN:Sb/GaAs quantum well laser diodes (LDs) have been grown by solid source molecular beam epitaxy using Sb as a surfactant. A record low threshold of 1.02 kA/cm2 was achieved for broad area under pulsed operation at room temperature. Performance single (SQW) and multiple (MQW) InGaAsN:Sb LDs are compared. While the temperature slope efficiency MQW remain almost same those SQW LDs, high characteristics greatly improved. operating 105 °C characteristic (T0) 92 K below 75 °C LD.
scitation.org
harvard.edu
mst.edu
aip.org
sci-hub.se 参考文章(14)
T. Higashi, T. Yamamoto, S. Ogita, Temperature sensitivity of oscillation wavelength in 1.3 /spl mu/m-GaInAsP/InP quantum-well semiconductor lasers lasers and electro optics society meeting. ,vol. 1, pp. 10- 11 ,(1996) , 10.1109/LEOS.1996.565096
S. Sato, Y. Osawa, T. Saitoh, I. Fujimura, Room-temperature pulsed operation of 1.3 [micro sign]m GaInNAs/GaAs laser diode Electronics Letters. ,vol. 33, pp. 1386- 1387 ,(1997) , 10.1049/EL:19970935
M.R. Gokhale, J. Wei, P.V. Studenkov, H. Wang, S.R. Forrest, High-performance long-wavelength (/spl lambda//spl sim/1.3 μm) InGaAsPN quantum-well lasers IEEE Photonics Technology Letters. ,vol. 11, pp. 952- 954 ,(1999) , 10.1109/68.775310
D.J. Friedman, J.F. Geisz, S.R. Kurtz, J.M. Olson, 1-eV solar cells with GaInNAs active layer Journal of Crystal Growth. ,vol. 195, pp. 409- 415 ,(1998) , 10.1016/S0022-0248(98)00561-2
D. E. Mars, D. I. Babic, Y. Kaneko, Ying-Lan Chang, Sudhir Subramanya, Joachim Kruger, Piotr Perlin, Eicke R. Weber, Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy Journal of Vacuum Science & Technology B. ,vol. 17, pp. 1272- 1275 ,(1999) , 10.1116/1.590738
Xiaodong Yang, MJ Jurkovic, JB Heroux, WI Wang, None, Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers Applied Physics Letters. ,vol. 75, pp. 178- 180 ,(1999) , 10.1063/1.124311
Xiaodong Yang, JB Heroux, MJ Jurkovic, WI Wang, None, Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy Journal of Vacuum Science & Technology B. ,vol. 17, pp. 1144- 1146 ,(1999) , 10.1116/1.590710
Masahiko Kondow, Kazuhisa Uomi, Atsuko Niwa, Takeshi Kitatani, Seiji Watahiki, Yoshiaki Yazawa, GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance Japanese Journal of Applied Physics. ,vol. 35, pp. 1273- 1275 ,(1996) , 10.1143/JJAP.35.1273
F. Höhnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert, M. Druminski, Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 - 1.38 [micro sign]m Electronics Letters. ,vol. 35, pp. 571- 572 ,(1999) , 10.1049/EL:19990421
H. P. Xin, K. L. Kavanagh, Z. Q. Zhu, C. W. Tu, Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells Applied Physics Letters. ,vol. 74, pp. 2337- 2339 ,(1999) , 10.1063/1.123843