摘要: The comparative analysis of the ultrafast carrier dynamics pure GaAs and ion-implanted GaNAs is reported. Different nitrogen concentrations (up to 4%) are implanted subsequently annealed by rapid thermal annealing (RTA). Damage channelling Rutherford backscattering (RBS) reveals that step improves crystal quality, but does not restore original quality. From photoreflectance measurements it concluded highest achieved active content in samples 0.5% for an equivalent implantation dose 1%. Carrier investigated one-colour pump-probe covering excitation wavelength range 730–860 nm (1.7–1.44 eV) with femtosecond time resolution. Comparison non-implanted indicates relaxation dominated traps associated damage.
unirioja.es
aip.org
sci-hub.se 参考文章(23)
T. S. Moss, Handbook on semiconductors North-Holland Pub. Co. , sole distributors for the USA and Canada, Elsevier North-Holland. ,(1980)
K. M. Yu, W. Walukiewicz, W. Shan, J. Wu, J. W. Ager, E. E. Haller, J. F. Geisz, M. C. Ridgway, Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1−x Applied Physics Letters. ,vol. 77, pp. 2858- 2860 ,(2000) , 10.1063/1.1320872
Max Josef Lederer, Vesselin Kolev, Barry Luther-Davies, Hark Hoe Tan, Chennupati Jagadish, Ion-implanted InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking Journal of Physics D. ,vol. 34, pp. 2455- 2464 ,(2001) , 10.1088/0022-3727/34/16/309
Alfred Leitenstorfer, Cornelius Fürst, Alfred Laubereau, Wolfgang Kaiser, Günther Tränkle, Günter Weimann, Femtosecond carrier dynamics in GaAs far from equilibrium. Physical Review Letters. ,vol. 76, pp. 1545- 1548 ,(1996) , 10.1103/PHYSREVLETT.76.1545
P. C. Chang, A. G. Baca, N. Y. Li, P. R. Sharps, H. Q. Hou, J. R. Laroche, F. Ren, InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor Applied Physics Letters. ,vol. 76, pp. 2788- 2790 ,(2000) , 10.1063/1.126476
C Skierbiszewski, P Perlin, Pl Wisniewski, W Knap, T Suski, W Walukiewicz, W Shan, KM Yu, JW Ager, EE Haller, JF Geisz, JM Olson, None, Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x Applied Physics Letters. ,vol. 76, pp. 2409- 2411 ,(2000) , 10.1063/1.126360
Xiaodong Yang, JB Heroux, MJ Jurkovic, WI Wang, None, High performance 1.3 μm InGaAsN:Sb/GaAs quantum well lasers grown by molecular beam epitaxy Journal of Vacuum Science & Technology B. ,vol. 18, pp. 1484- 1487 ,(2000) , 10.1116/1.591409
K.S. Jones, C.J. Santana, Amorphization of elemental and compound semiconductors upon ion implantation Journal of Materials Research. ,vol. 6, pp. 1048- 1054 ,(1991) , 10.1557/JMR.1991.1048
C. W. Coldren, S. G. Spruytte, J. S. Harris, M. C. Larson, Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy Journal of Vacuum Science & Technology B. ,vol. 18, pp. 1480- 1483 ,(2000) , 10.1116/1.591408
I. Suemune, K. Uesugi, W. Walukiewicz, Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs Applied Physics Letters. ,vol. 77, pp. 3021- 3023 ,(2000) , 10.1063/1.1322633