Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers
作者： J.S. Yu , J.D. Song , J.M. Kim , Y.T. Lee , H. Lim
DOI: 10.1007/S00339-002-1900-Z
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摘要: The feasibility of normal GaAs, low-temperature-grown GaAs (LT-GaAs) and InGaAs (LT-InGaAs) as the capping layers for impurity-free vacancy disordering (IFVD) In0.2Ga0.8As/GaAs multiquantum-well (MQW) structure has been studied. LT-GaAs LT-InGaAs were tested outermost layer intermediate cap underneath SiO2 or Si3N4 layer. degree quantum-well intermixing (QWI) induced by rapid thermal annealing was estimated shift photoluminescence (PL) peak energy. It found that IFVD MQW using much smaller (larger) than a (Si3N4) also observed insertion below reduces QWI PL intensity after QWI. A plausible explanation influence InGaAs/GaAs is discussed.
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