Effect of wet oxidized AlxGa1−xAs layer on the interdiffusion of InGaAs/GaAs quantum wells
作者： Joong-Seon Choe , Sang-Wan Ryu , Byung-Doo Choe , H. Lim
DOI: 10.1063/1.367505
关键词: Analytical chemistry 、 Quantum well 、 X-ray absorption spectroscopy 、 Materials science 、 Layer (electronics) 、 Thermal stability 、 Gallium arsenide 、 Condensed matter physics 、 Strain effect 、 Ingaas gaas 、 Diffusion
摘要: The effect of wet oxidized AlAs cap layer and AlGaAs interlayer on the thermal stability In0.2Ga0.8As/GaAs quantum well (QW) is studied. QW interdiffusion rate observed to increase with Al composition AlxGa1−xAs until x reaches about 0.5 then saturate for x⩾0.5. When oxidation performed at 380 °C 15 min, threshold value enhancement found be 0.3. It also confirmed that can only explained when strain in InGaAs taken into account.
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