Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers
作者： J. S. Tsang , C. P. Lee , S. H. Lee , K. L. Tsai , C. M. Tsai
DOI: 10.1063/1.360810
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摘要: Compositional disordering of InGaAs/GaAs superlattices using a low‐temperature‐grown GaAs cap layer (LT‐GaAs) by molecular beam epitaxy has been studied. The the superlattice was verified photoluminescence and double‐crystal x‐ray rocking curve measurements. Ga‐vacancy‐enhanced interdiffusion due to presence LT‐GaAs found be mechanism. Diffusion equations Schrodinger’s equation were solved numerically obtain composition profile transition energies in disordered quantum well, respectively. simulated energy shifts for samples under different annealing conditions agreed very well with experimental results. calculated effective diffusivity In–Ga an activation 1.63 eV, which is smaller than 1.93 intrinsic interdiffusion. enhanced about two orders magnitude larger diffusivity.
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