Exciton-binding-energy maximum in Ga1-xInxAs/GaAs quantum wells.
作者： M. J. L. S. Haines , N. Ahmed , S. J. A. Adams , K. Mitchell , I. R. Agool
DOI: 10.1103/PHYSREVB.43.11944
关键词:
摘要: Premiere observation du pic predit theoriquement pour l'energie de liaison excitonique en fonction la largeur puits quantique. Les valeurs sont obtenues directement a partir des mesures magneto-optiques inter-bandes et comparees aux calculs fondes sur methode d'enveloppe. La bonne qualite echantillons est demontree par le fait que l'on observe les transitions impliquant nombres quantiques Landau jusqu'a huit dans tous qu'elles identifiables champs magnetiques inferieurs 1T
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