MBE growth and properties of ZnO on sapphire and SiC substrates
作者： M. A. L. Johnson , Shizuo Fujita , W. H. Rowland , W. C. Hughes , J. W. Cook
DOI: 10.1007/BF02666649
关键词: Reflection high-energy electron diffraction 、 Wurtzite crystal structure 、 Band gap 、 Sapphire 、 Electron mobility 、 Mineralogy 、 Materials science 、 Molecular beam epitaxy 、 Epitaxy 、 Optoelectronics 、 Crystal growth
摘要: Molecular beam epitaxy (MBE) of ZnO on both sapphire and SiC substrates has been demonstrated. was used as a buffer layer for the epitaxial growth GaN. is wurtzite crystal with close lattice match (<2% mismatch) to GaN, an energy gap 3.3 eV at room temperature, low predicted conduction band offset GaN SiC, high electron conductivity. relatively soft compared nitride semiconductors expected act compliant layer. Inductively coupled radio frequency plasma sources were generate active beams nitrogen oxygen MBE growth. Characterization by optical emission spectroscopy clearly indicated significant dissociation O2 into atomic oxygen. Reflected diffraction (RHEED) surface showed two-dimensional layers had n-type carrier concentration 9 × 1018 cm−3 mobility 260 cm2/V-s. Initial I-V measurements displayed ohmic behavior across SiC/ZnO ZnO/GaN heterointerfaces. RHEED also exhibited We have demonstrated viability using
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