ZnO Films Deposited by Electron-Beam Evaporation: The Effect of Ion Bombardment
作者： A. N. Gruzintsev , V. T. Volkov , L. N. Matveeva
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摘要: The deposition of ZnO films on different substrates by electron-beam evaporation is studied experimentally. substrate essentially held at a negative bias voltage during the process. dependence lattice structure and photoluminescence spectra type investigated. It shown that incident ion stream resulting from allows one to produce lower temperature. provides epitaxial growth found lie between –400 –200 V. determined deposited (0001)-oriented sapphire have carrier concentration 7.5 × 1018 cm–3 Hall mobility 18.4 cm2/(V s).
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