Growth of indium gallium nitride (InGaN) on porous gallium nitride (GaN) template by metal-organic chemical vapor deposition (MOCVD)

摘要: Si-doped porous GaN is fabricated by UV-enhanced Pt-assisted electrochemical etching and together with a low-temperature grown buffer layer are utilized as the template for InGaN growth. The network in shows nanostructures formed on surface. Subsequent growth of that it relaxed these area which takes place very small. strain relaxation favors higher indium incorporation. Besides, this creates relatively rough surface to modify energy can enhance nucleation impinging atoms thereby increasing It shifts luminescence from 445 run conventionally structure 575 nm enhances intensity more than two-fold technique present invention under same conditions. There also spectral broadening output extending 480 720 nm.