High voltage power schottky with aluminum barrier metal spaced from first diffused ring
作者： Perry L. Merrill , Kyle A. Spring
DOI:
关键词: Schottky diode 、 Aluminium 、 Optoelectronics 、 High voltage 、 Electrical engineering 、 Voltage 、 Ring (chemistry) 、 Materials science 、 Schottky barrier 、 Thermal conduction 、 Diode
摘要: A vertical conduction Schottky device having a reverse voltage rating in excess of 400 volts uses an aluminum barrier metal contact with N - epitaxial silicon surface. diffused P + guard ring surrounds the and is spaced therefrom by small gap which fully depleted at low to connect under conditions. Lifetime killing used for body diode.
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