High-speed low-loss p-n diode having a channel structure
作者： Y. Shimizu , M. Naito , S. Murakami , Y. Terasawa
关键词:
摘要: A p-n diode having a channel structure (static shielding diode, SSD) is proposed to increase the reverse blocking voltage of low-loss high-speed diode. It shown by numerical analysis and experiment that low-loss, SSD with high capability can be realized surrounding p-layer portion n-layer highly doped p+-layer. In this method, increased factor 2 3.5 without sacrificing low forward drop fast recovery. The 0.81-V at 80 A/cm2, 180-V 150°C, 87-ns recovery time fabricated.
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sci-hub.se 参考文章(4)
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