Transparent nonvolatile memory thin film transistor and method of manufacturing the same
作者： Shin Hyuk Yang , Seung Youl Kang , Chi Sun Hwang , Kyoung Ik Cho , Soon Woon Jung
DOI:
关键词: Oxide semiconductor 、 Optoelectronics 、 Materials science 、 Semiconductor 、 Electrode 、 Thin layer 、 Thin-film transistor 、 Non-volatile memory 、 Substrate (electronics) 、 Ferroelectricity
摘要: Provided are a transparent nonvolatile memory thin film transistor (TFT) and method of manufacturing the same. The TFT includes source drain electrodes disposed on substrate. A semiconductor layer is substrate interposed between electrodes. An organic ferroelectric layer. gate electrode in alignment with Thus, employs layer, oxide auxiliary insulating layers above below thereby enabling low-cost manufacture device capable low-temperature process.
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