Non-volatile ferroelectric thin film device using an organic ambipolar semiconductor and method for processing such a device
作者： Fredericus Johannes Touwslager , Albert W. Marsman , Dagobert Michel De Leeuw , Gerwin Hermanus Gelinck
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摘要: A non-volatile ferroelectric memory device is proposed which comprises a combination of an organic polymer with ambipolar semiconductor. The devices the present invention are compatible - and fully exploit benefits polymers, i.e. solution processing, low-cost, low temperature layer deposition compatibility flexible substrates.
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