Field effect transistor memory device
作者： Xiaogan Liang , Hongsuk Nam , Mikai Chen , Sungjin Wi
DOI:
关键词:
摘要: A method for generating a non-volatile memory device may comprise: applying plasma preset time period to an exposed surface of channel field effect transistor such that plurality charge-trapping sites are formed at the channel. The is comprised multi-layer structure atomically thin two-dimensional sheets.
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