Non-volatile memory device and matrix display panel using the same
作者： Michael Redecker
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摘要: A non-volatile memory device and a matrix display panel using the are provided. The includes source, drain, an active layer, gate insulating gate. layer is formed of organic semiconductor in contact region between source drain. gate-insulating ferroelectric material on layer. Accordingly, very flexible, lightweight multi-programmable can be easily manufactured.
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