Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
作者： Guenter Schmid , Marcus Halik , Hagen Klauk , Peter Baeuerle , Elena Mean-Osteritz
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摘要: Materials are described for producing memory cells which have a size in the nanometer range and include CT complex located between two electrodes. The includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes perylene compounds.
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