Mechanism for Production of Interstitials in KCl by X Rays at Low Temperatures
作者： R. E. Howard , Seymour Vosko , R. Smoluchowski
关键词: Halogen 、 Mechanism based 、 Kinetic energy 、 Chemical physics 、 Vacancy defect 、 Irradiation 、 Atomic physics 、 Ionization 、 Materials science
摘要: Experiments indicate that halogen vacancies and interstitials may be formed by x irradiation of KCl at low temperatures. The validity a mechanism based on multiple ionization depends upon several factors; among these factors are efficiency the availability sufficient kinetic energy to remove interstitial from immediate vicinity vacancy. These two conditions satisfied. (auth)
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