Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devices

作者: P. Yan , Y. Li , Y. J. Hui , S. J. Zhong , Y. X. Zhou

DOI: 10.1063/1.4928979

关键词: Resistive touchscreenElectron hoppingNeuromorphic engineeringElectronOptoelectronicsMaterials scienceVariable-range hoppingMemristorSchottky diodeCondensed matter physicsSchottky effect

摘要: P-type Cu2O is a promising CMOS-compatible candidate to fabricate memristive devices for next-generation memory, logic and neuromorphic computing. In this letter, the microscopic switching conducting mechanisms in TiW/Cu2O/Cu have been thoroughly investigated. The bipolar resistive behaviors without an electro-forming process are ascribed formation rupture of filaments composed copper vacancies. low state, transport electrons follows Mott's variable range hopping theory. When switch back high coexistence Schottky emission at Cu/Cu2O interface electron between residual found dominate process. Our results will contribute further understanding optimization p-type materials.

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