作者: P. Yan , Y. Li , Y. J. Hui , S. J. Zhong , Y. X. Zhou
DOI: 10.1063/1.4928979
关键词: Resistive touchscreen 、 Electron hopping 、 Neuromorphic engineering 、 Electron 、 Optoelectronics 、 Materials science 、 Variable-range hopping 、 Memristor 、 Schottky diode 、 Condensed matter physics 、 Schottky effect
摘要: P-type Cu2O is a promising CMOS-compatible candidate to fabricate memristive devices for next-generation memory, logic and neuromorphic computing. In this letter, the microscopic switching conducting mechanisms in TiW/Cu2O/Cu have been thoroughly investigated. The bipolar resistive behaviors without an electro-forming process are ascribed formation rupture of filaments composed copper vacancies. low state, transport electrons follows Mott's variable range hopping theory. When switch back high coexistence Schottky emission at Cu/Cu2O interface electron between residual found dominate process. Our results will contribute further understanding optimization p-type materials.