Oxygen-concentration effect on p-type CuAlOx resistive switching behaviors and the nature of conducting filaments
作者： L. Zhang , H. Y. Xu , Z. Q. Wang , H. Yu , X. N. Zhao
DOI: 10.1063/1.4867977
关键词: Oxide 、 Nanotechnology 、 Chemical physics 、 Amorphous solid 、 Amorphous semiconductors 、 Resistive switching 、 Materials science 、 Limiting oxygen concentration
摘要: … Therefore, the observed oxygen-concentration dependence … p-type CuAlO x do not consist of oxygen vacancies and, instead, may be attributed to oxygen-rich defects or cation vacancies…
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sci-hub.se 参考文章(26)
I. Hamada, H. Katayama-Yoshida, Energetics of native defects in CuAlO2 Physica B-condensed Matter. ,vol. 376, pp. 808- 811 ,(2006) , 10.1016/J.PHYSB.2005.12.202
Keisuke Oka, Takeshi Yanagida, Kazuki Nagashima, Tomoji Kawai, Jin-Soo Kim, Bae Ho Park, Resistive-switching memory effects of NiO nanowire/metal junctions. Journal of the American Chemical Society. ,vol. 132, pp. 6634- 6635 ,(2010) , 10.1021/JA101742F
Min-Chen Chen, Ting-Chang Chang, Chih-Tsung Tsai, Sheng-Yao Huang, Shih-Ching Chen, Chih-Wei Hu, Simon M. Sze, Ming-Jinn Tsai, Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films Applied Physics Letters. ,vol. 96, pp. 262110- ,(2010) , 10.1063/1.3456379
Ming-Jiue Yu, Yung-Hui Yeh, Chun-Cheng Cheng, Chang-Yu Lin, Geng-Tai Ho, Benjamin Chih-Ming Lai, Chyi-Ming Leu, Tuo-Hung Hou, Yi-Jen Chan, Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature IEEE Electron Device Letters. ,vol. 33, pp. 47- 49 ,(2012) , 10.1109/LED.2011.2170809
L.D Kadam, P.S Patil, Thickness-dependent properties of sprayed cobalt oxide thin films Materials Chemistry and Physics. ,vol. 68, pp. 225- 232 ,(2001) , 10.1016/S0254-0584(00)00367-9
Myoung-Jae Lee, Seungwu Han, Sang Ho Jeon, Bae Ho Park, Bo Soo Kang, Seung-Eon Ahn, Ki Hwan Kim, Chang Bum Lee, Chang Jung Kim, In-Kyeong Yoo, David H Seo, Xiang-Shu Li, Jong-Bong Park, Jung-Hyun Lee, Youngsoo Park, None, Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. Nano Letters. ,vol. 9, pp. 1476- 1481 ,(2009) , 10.1021/NL803387Q
Fang Zhi-Jie, Shi Li-Jie, Liu Yong-Hui, First-principle study of native defects in CuScO2 and CuYO2 Chinese Physics B. ,vol. 17, pp. 4279- 4284 ,(2008) , 10.1088/1674-1056/17/11/053
Zhenguo Ji, Qinan Mao, Weiqing Ke, Effects of oxygen partial pressure on resistive switching characteristics of ZnO thin films by DC reactive magnetron sputtering Solid State Communications. ,vol. 150, pp. 1919- 1922 ,(2010) , 10.1016/J.SSC.2010.07.032
U. D. Wdowik, K. Parlinski, Electronic structure of cation-deficient CoO from first principles Physical Review B. ,vol. 77, pp. 115110- ,(2008) , 10.1103/PHYSREVB.77.115110
Xun Cao, Xiaomin Li, Xiangdong Gao, Xinjun Liu, Chang Yang, Lidong Chen, Structural properties and resistive switching behaviour in MgxZn1−xO alloy films grown by pulsed laser deposition Journal of Physics D. ,vol. 44, pp. 015302- ,(2011) , 10.1088/0022-3727/44/1/015302