Investigating the structural changes induced by SHI on W–SiC samples
作者： T.T. Thabethe , T.P. Ntsoane , S. Biira , E.G. Njoroge , T.T. Hlatshwayo
DOI: 10.1016/J.VACUUM.2020.109230
关键词: Fluence 、 Scanning electron microscope 、 Irradiation 、 Analytical chemistry 、 Thin film 、 Deposition (law) 、 Tungsten 、 Rutherford backscattering spectrometry 、 Layer (electronics) 、 Materials science
摘要: Abstract The structural modification of tungsten-SiC samples irradiated with Xe26+ swift heavy ions (SHIs) was investigated. Tungsten (W) thin films were deposited on 6H–SiC using e-beam. After deposition, the W–SiC by 167 MeV to fluences 1012 cm−2, 1013 cm−2 and 1014 cm−2 at room temperature. sample composition, phase identification, residual stress component surface morphology investigated Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) scanning electron microscopy (SEM). results indicated that as-deposited composed W SiC, no reaction between them. a fluence 1012 cm−2 showed SiC took place resulting in formation WSi2 WC phases. 1013 1014 cm−2 further reactions being only phases formed. substrate had bi-axial compressive which did not excess 700 MPa after irradiating highest fluence. layer flat homogeneous deposition. A textured identifiable grains observed SHI irradiations.
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