Yttrium-doped CuSCN thin film transistor: synthesis and optoelectronic characterization study
作者： Sadia Baig , Arthur D. Hendsbee , Pankaj Kumar , Safeer Ahmed , Yuning Li
DOI: 10.1039/C9TC05371A
关键词: Materials science 、 Spin coating 、 Electron mobility 、 Thin film 、 Grain boundary 、 Copper(I) thiocyanate 、 Band gap 、 Optoelectronics 、 Thin-film transistor 、 Doping
摘要: Highly efficient, solution-processable, transparent semiconductor thin films of yttrium-doped copper thiocyanate (Y(III)-CuSCN) have been developed using a simple and cost-effective modified spin coating method investigated for their optical, electrical electrochemical properties. The pure β-CuSCN pinhole-free compact (40 nm thickness) showed ∼242 S cm−1 conductivity with 0.97 root mean square surface roughness (Rrms) an indirect bandgap 3.72 eV. 1 mole% Y(III)-CuSCN (65 thick) afforded Rrms 3.2 nm, narrowed 3.46 eV remarkably improved ∼566 cm−1. Impedance studies indicated flat-band potential −5.19 65.3k Ω cm−2 as the interfacial charge transfer resistance CuSCN. values were 14.13k transport through grains 23.73k cm−2via grain boundaries. hole mobility film transistor (TFT) devices highest among those reported CuSCN; they recorded ∼0.36 cm2 V−1 s−1 ∼0.99 Y-doped CuSCN materials, respectively, on/off ratio was ∼104.
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