Influence of annealing on microstructural and photoelectrochemical characteristics of CuSCN thin films via electrochemical process
作者： Mao-Chia) Huang , MC (Huang , TsingHai) Wang , TH (Wang , Yao-Tien) Tseng
DOI: 10.1016/J.JALLCOM.2014.10.147
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摘要: Abstract Thin films of p-type β-CuSCN were deposited on indium–tin oxide glass substrates via electrochemical process. Various annealing temperatures (200, 300 and 400 °C) taken into consideration. The influence temperature structural, optical, electrical photoelectrochemical characteristics thin investigated. Results from X-ray diffraction indicated as-obtained film was in a hexagonal close pack crystal structure. We found that the crystallographic orientation changed optical energy band gap slightly increased with increasing temperatures. These properties made CuSCN annealed at 400 °C better performance photocurrent density about −0.39 mA/cm 2 −0.5 V vs. SCE. This value is 5 times higher than as-deposited film. Observed likely due to intrinsic charge carrier concentration, lower resistance within CuSCN/electrolyte interface.
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