Synthesis and characterization of Cu2SnSe3 thin films by electrodeposition route

摘要: Abstract A single phase Cu2SnSe3 polycrystalline semiconductor compound has been easily synthesized through electrodeposition technique onto conductive glass ITO substrates from an acidic solution at room temperature for the first time. The of CTSe films was studied using cyclic voltammetry, structural, morphological, optical, and electrical measurements. effects annealing on growth were studied. XRD Raman studies showed that annealed thin have a nature with cubic crystal structure preferential orientation (111), crystalline size increases as increases. AFM investigations show deposited film layer widely varies temperature. optical band gap alloys is inversely related to grain decreases 1.08 0.96 eV. Finally, Hall effect measurements reveal all are p-type semiconductors in particular sample 300 °C exhibit high mobility 5.27 cm2/V s low resistivity 0.91 Ω cm compared other samples.