作者: Zeguo Tang , Yuki Nukui , Kiichi Kosaka , Naoki Ashida , Hikaru Uegaki
DOI: 10.1016/J.JALLCOM.2014.04.098
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摘要: Abstract The creation of secondary phases, such as Cu 2 − x Se and SnSe, their influence on electrical properties SnSe 3 (CTSe) thin films fabricated by selenization Cu–Sn metal precursors are investigated. 2− content in CTSe is estimated via deconvolution grazing incidence X-ray diffraction (GIXRD) patterns, the results suggest that increases with increasing Cu/Sn ratio precursors. We also found using mixture powders source an effective approach to suppress phase. Meanwhile, selective etching realized potassium cyanide (KCN) solution. Hall measurement reveal phase rather than makes major contribution high carrier concentration (larger 10 18 cm ) films. further decrease discussed.