Reaction path for formation of Cu2SnSe3 film by selenization of Cu–Sn precursor

摘要: Abstract Reaction path for fabrication of Cu 2 SnSe 3 (CTSe) film by selenization Cu–Sn precursor was investigated via in-situ X-ray diffraction (XRD) as well glazing incident XRD (GIXRD) measurements. Cross-sectional scanning electron microscopy (SEM)-energy dispersive spectrometry (EDS) and transmission microscope (TEM) analyses revealed the element phase distribution along depth direction. Based on these results, a proposed growth model concluded below: first, Se atoms from evaporation source reacted with Sn to produce 2− x phases. Noticeably, resulting presented bilayer feature located at surface bottom. Second, CTSe formed interface increasing temperature. The depleted Sn-related secondary phases when Cu/Sn ratio smaller than 1.72. were coexisted independent in metallic precursor, which attributed weak diffusion ability film. origins high carrier concentration films ascribed intrinsic acceptor effective approach reduce value explored. An attempt solar cell absorber performed photocurrent 9.9 mA/cm detected.