Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates
作者： G. E. Cirlin , V. G. Dubrovskii , I. P. Soshnikov , N. V. Sibirev , Yu. B. Samsonenko
关键词: Lattice (order) 、 Epitaxy 、 Molecular beam epitaxy 、 Materials science 、 Nanowire 、 Optoelectronics 、 Nanotechnology 、 Lattice mismatch
摘要: We report on the growth properties of InAs, InP and GaAs nanowires (NWs) different lattice mismatched substrates, in particular, Si(111), during Au-assisted molecular beam epitaxy (MBE). show that critical diameter for epitaxial dislocation-free III–V NWs decreases as mismatch increases equals 24 nm InAs 39 44 GaAs(111)B, 110 Si(111). When diameters exceed these values, are dislocated or do not grow at all. The corresponding temperature domains NW extend from 320 °C to 340 330 360 370 420 GaAs(111)B 380 540 Experimental values compared previous findings discussed within frame a theoretical model. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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