Transport and strain relaxation in wurtzite InAs–GaAs core-shell heterowires

摘要: Indium-arsenide–gallium-arsenide (InAs–GaAs) core-shell, wurtzite nanowires have been grown on GaAs (001) substrates. The core-shell geometries (core radii 11 to 26 nm, shell thickness >2.5 nm) exceeded equilibrium critical values for strain relaxation via dislocations, apparent from transmission electron microscopy. Partial axial is detected in all increasing exponentially with size, while radial >90%, but undetected both smaller core <16 nm and thicknesses <5 nm. Electrical measurements individual show that the resulting dislocations are correlated reduced field-effect mobility compared bare InAs nanowires.