A model for the non-steady-state temperature behaviour of thermoelectric cooling semiconductor devices
作者： P J Taylor , W A Jesser , F D Rosi , Z Derzko
DOI: 10.1088/0268-1242/12/4/018
关键词: Mechanics 、 Semiconductor device 、 Joule heating 、 Thermoelectric materials 、 Thermoelectric cooling 、 Thermoelectric generator 、 Limit (music) 、 Thermoelectric effect 、 Thermal conductivity 、 Chemistry 、 Thermodynamics 、 Electrical and Electronic Engineering 、 Materials Chemistry 、 Electronic, Optical and Magnetic Materials 、 Condensed matter physics
摘要: A simple, easily applied model describing the non-steady-state temperature behaviour of thermoelectric cooling semiconductor devices is derived from consideration heat flows arising thermal conductivity, Peltier effect and Joule heating in a typical device. The tested by comparison with measured performance device constructed for this study. shown to accurately predict statistical confidence limit 99% given criteria experimental conditions.
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