Uncovering Nanoclusters in Amorphous AlN: An Ab Initio Study

作者: Murat Durandurdu

DOI: 10.1111/JACE.13406

关键词: NanotechnologyAmorphous solidMaterials scienceNanoclustersAb initioAmorphous matrixMolecular dynamicsBand gapChemical physics

摘要: Amorphous AlN (a-AlN) is modeled by melt-and-quench technique using ab initio molecular dynamic simulations. For the first time, three-dimensional hexagonal-like nanoclusters embedded in amorphous matrix are proposed for a-AlN. The model chemically ordered and dominantly fourfold coordinated, but its short-range order partially different from crystalline morphology due to nanoclusters. semiconducting with a theoretical band gap of 1.7 eV.

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