First principles molecular dynamics study of amorphous Al[sub x]Ga[sub 1−x]N alloys

作者: Kuiying Chen , David A. Drabold

DOI: 10.1063/1.1478132

关键词: Radial distribution functionBond lengthMolecular vibrationAtomic physicsMaterials scienceSolid-state physicsElectronic structureMolecular physicsHomonuclear moleculeAmorphous solidMolecular dynamics

摘要: We have systematically investigated atomic structures, electronic and dynamical properties of amorphous aluminum–gallium–nitride alloys (a-AlGaN) by performing first principles local basis molecular dynamics simulations. The network topology defects the 216-atom model system been analyzed with radial distribution function, angular ring statistics, coordination. It was found that models mixed threefold fourfold coordinations, number (fourfold) coordinated atoms in decreased (increased) increasing Al composition. No odd rings are found, indicating no wrong bonds (homonuclear bonds) appear a-AlxGa1−xN alloys. Ga–N Al–N bond lengths show a small variation composition, which is agreement recent extended x-ray absorption fine structure experimental measurements. examined density states bonding charact...

参考文章(31)
Hong Chen, Kuiying Chen, D. A. Drabold, M. E. Kordesch, Band gap engineering in amorphous AlxGa1−xN: Experiment and ab initio calculations Applied Physics Letters. ,vol. 77, pp. 1117- 1119 ,(2000) , 10.1063/1.1289496
K. E. Miyano, J. C. Woicik, Lawrence H. Robins, C. E. Bouldin, D. K. Wickenden, EXTENDED X-RAY ABSORPTION FINE STRUCTURE STUDY OF ALXGA(1-X)N FILMS Applied Physics Letters. ,vol. 70, pp. 2108- 2110 ,(1997) , 10.1063/1.118963
Y Koide, H Itoh, N Sawaki, I Akasaki, M Hashimoto, None, Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPE Journal of The Electrochemical Society. ,vol. 133, pp. 1956- 1960 ,(1986) , 10.1149/1.2109056
W. J. Fan, M. F. Li, T. C. Chong, J. B. Xia, Electronic properties of zinc‐blende GaN, AlN, and their alloys Ga1−xAlxN Journal of Applied Physics. ,vol. 79, pp. 188- 194 ,(1996) , 10.1063/1.360930
Alan F. Wright, J. S. Nelson, Explicit treatment of the gallium 3delectrons in GaN using the plane-wave pseudopotential method Physical Review B. ,vol. 50, pp. 2159- 2165 ,(1994) , 10.1103/PHYSREVB.50.2159
P. E. Van Camp, V. E. Van Doren, J. T. Devreese, High-pressure properties of wurtzite- and rocksalt-type aluminum nitride Physical Review B. ,vol. 44, pp. 9056- 9059 ,(1991) , 10.1103/PHYSREVB.44.9056
Jürgen Fritsch, Otto F Sankey, Kevin E Schmidt, John B Page, First-principles local-orbital calculation of the structural and electronic properties of ordered and random alloys of GaN and AlN Journal of Physics: Condensed Matter. ,vol. 11, pp. 2351- 2361 ,(1999) , 10.1088/0953-8984/11/11/007
S. Bloom, G. Harbeke, E. Meier, I. B. Ortenburger, Band Structure and Reflectivity of GaN Physica Status Solidi B-basic Solid State Physics. ,vol. 66, pp. 161- 168 ,(1974) , 10.1002/PSSB.2220660117
T. Lei, T. D. Moustakas, R. J. Graham, Y. He, S. J. Berkowitz, Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon Journal of Applied Physics. ,vol. 71, pp. 4933- 4943 ,(1992) , 10.1063/1.350642
P. A. Fedders, Y. Fu, D. A. Drabold, Atomistic origins of light-induced defects in a-Si. Physical Review Letters. ,vol. 68, pp. 1888- 1891 ,(1992) , 10.1103/PHYSREVLETT.68.1888