Modeling of the atomic structure and electronic properties of amorphous GaN1−xAsx
作者： E Bakir Kandemir , B Gönül , GT Barkema , KM Yu , W Walukiewicz
DOI: 10.1016/J.COMMATSCI.2013.09.039
关键词:
摘要: Abstract Chemically ordered 250-atom models for amorphous GaN1−xAsx alloys in the concentration range of 0.17
elsevier.com
core.ac.uk 
sci-hub.se 参考文章(23)
Hong Chen, Kuiying Chen, D. A. Drabold, M. E. Kordesch, Band gap engineering in amorphous AlxGa1−xN: Experiment and ab initio calculations Applied Physics Letters. ,vol. 77, pp. 1117- 1119 ,(2000) , 10.1063/1.1289496
KM Yu, SV Novikov, R Broesler, IN Demchenko, JD Denlinger, Z Liliental-Weber, F Luckert, RW Martin, W Walukiewicz, CT Foxon, None, Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range Journal of Applied Physics. ,vol. 106, pp. 103709- ,(2009) , 10.1063/1.3259434
KM Yu, SV Novikov, R Broesler, Z Liliental-Weber, AX Levander, VM Kao, OD Dubon, J Wu, W Walukiewicz, CT Foxon, None, Low gap amorphous GaN1−xAsx alloys grown on glass substrate Applied Physics Letters. ,vol. 97, pp. 101906- ,(2010) , 10.1063/1.3488826
Kuiying Chen, David A. Drabold, First principles molecular dynamics study of amorphous Al[sub x]Ga[sub 1−x]N alloys Journal of Applied Physics. ,vol. 91, pp. 9743- 9751 ,(2002) , 10.1063/1.1478132
Parthapratim Biswas, Raymond Atta-Fynn, D. A. Drabold, Reverse Monte Carlo modeling of amorphous silicon Physical Review B. ,vol. 69, pp. 195207- ,(2004) , 10.1103/PHYSREVB.69.195207
R. L. C. Vink, G. T. Barkema, Large well-relaxed models of vitreous silica, coordination numbers and entropy Physical Review B. ,vol. 67, pp. 245201- ,(2003) , 10.1103/PHYSREVB.67.245201
Morrel H. Cohen, H. Fritzsche, S. R. Ovshinsky, Simple band model for amorphous semiconducting alloys Physical Review Letters. ,vol. 22, pp. 1065- 1068 ,(1969) , 10.1103/PHYSREVLETT.22.1065
D. A. Drabold, Topics in the theory of amorphous materials European Physical Journal B. ,vol. 68, pp. 1- 21 ,(2009) , 10.1140/EPJB/E2009-00080-0
W Walukiewicz, W Shan, KM Yu, JW Ager III, EE Haller, I Miotkowski, MJ Seong, H Alawadhi, AK Ramdas, None, Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries Physical Review Letters. ,vol. 85, pp. 1552- 1555 ,(2000) , 10.1103/PHYSREVLETT.85.1552
B. Cai, D. A. Drabold, Ab initio models of amorphous InN Physical Review B. ,vol. 79, pp. 195204- ,(2009) , 10.1103/PHYSREVB.79.195204