Low gap amorphous GaN1−xAsx alloys grown on glass substrate
作者： KM Yu , SV Novikov , R Broesler , Z Liliental-Weber , AX Levander
DOI: 10.1063/1.3488826
关键词: Semiconductor 、 Band gap 、 Crystal growth 、 Amorphous solid 、 Analytical chemistry 、 Molecular beam epitaxy 、 Borosilicate glass 、 Epitaxy 、 Mineralogy 、 Thin film 、 Materials science
摘要: Amorphous GaN1−xAsx layers with As content in the range of x=0.1 to 0.6 were grown by molecular beam epitaxy on Pyrex glass substrate. These alloys exhibit a wide band gap values from 2.2 1.3 eV. We found that density amorphous films is ∼0.8–0.85 their corresponding crystalline value. have smooth morphology, homogeneous composition, and sharp well defined optical absorption edges. The measured for are excellent agreement predictions anticrossing model. high coefficient ∼105 cm−1 suggests relatively thin (on order 1 μm) necessary photovoltaic application.
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