Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production
作者： SV Novikov , CR Staddon , CT Foxon , KM Yu , R Broesler
DOI: 10.1116/1.3368600
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摘要: The authors have succeeded in growing GaN1−xAsx alloys over a large composition range (0 0.17 are amorphous. Optical absorption measurements together with x-ray and emission spectroscopy results reveal continuous gradual decrease band gap from ∼3.4 to <1 eV increasing As content. energy reaches its minimum of ∼0.8 eV at x∼0.8. dependence the crystalline follows prediction anticrossing model (BAC). However, our measured amorphous 0.3
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