Doping of GaN1-xAsx with high As content
作者： AX Levander , SV Novikov , Z Liliental-Weber , R Dos Reis , OD Dubon
DOI: 10.1063/1.3657779
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摘要: Recent work has shown that GaN{sub 1-x}As{sub x} can be grown across the entire composition range by low temperature molecular beam epitaxy with intermediate compositions being amorphous, but control of electrical properties through doping is critical for functionalizing this material. Here we report bipolar high As content to conductivities above 4 S/cm at room using Mg or Te. The carrier type was confirmed thermopower measurements. Doping requires an increase in Ga flux during growth resulting a mixed phase material polycrystalline GaAs:N embedded amorphous x}.
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