Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range

摘要: Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only limited number alloys can be easily synthesized in the full composition range. Such are, general, formed component elements that are well matched terms ionicity, atom size, and electronegativity. In contrast there broad class potential with distinctly different properties. most instances these mismatched immiscible under standard growth conditions. Here we report on GaN1−xAsx, highly mismatched, alloy system was successfully whole range using nonequilibrium low temperature molecular beam epitaxy technique. The amorphous 0.17 0.2, upward movement valence band x<0.2. unique features structure offer an opportunity GaN1−xAsx various types solar power conversion devices.