A density functional theory research on Cs–O activation process of GaAlAs photocathodes
作者： Xiaohua Yu
DOI: 10.1007/S10853-016-0103-5
关键词:
摘要: Using plane-wave ultrasoft pseudopotential based on first-principles, the Cs–O activation process of GaAlAs photocathodes is investigated. In alternate process, unit inclined to form Cs-outer structure. After adsorption O atom, additional atoms weaken dipole between Cs and β 2 (2 × 4) surface introduce O. Dual-dipole model used express variation tendency moment work function. During electrons offset surface, at cause n-type state, result in downwards band bending; same time, vacuum level gradually lowered, forming two potential barriers. An experiment performed photocurrent curve well consistent with calculation results. Zn doping, function near lower than surrounding, causing scale-like effect.
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